IMWH170R650M1XKSA1

IMWH170R650M1XKSA1

Part Number: IMWH170R650M1XKSA1
Product Classification: Single FETs, MOSFETs
Manufacturer: Infineon Technologies
Description: IMWH170R650M1XKSA1
Packaging: Tube
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Mounting Type Through Hole
  • Part Status Active
  • FET Type N-Channel
  • FET Feature -
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Grade -
  • Qualification -
  • Power Dissipation (Max) 88W (Tc)
  • Package / Case TO-247-3
  • Current - Continuous Drain (Id) @ 25°C 7.5A (Tc)
  • Technology SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss) 1700 V
  • Drive Voltage (Max Rds On, Min Rds On) 12V, 15V
  • Vgs(th) (Max) @ Id 5.7V @ 1.7mA
  • Vgs (Max) 15V, 12V
  • Supplier Device Package PG-TO247-3-U04
  • Rds On (Max) @ Id, Vgs 580mOhm @ 1.5A, 15V
  • Gate Charge (Qg) (Max) @ Vgs 8.1 nC @ 12 V
  • Input Capacitance (Ciss) (Max) @ Vds 337 pF @ 1000 V