IPB023N04NF2SATMA1
Part Number:
IPB023N04NF2SATMA1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Infineon Technologies
Description:
TRENCH <= 40V
Packaging:
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Obsolete
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Drain to Source Voltage (Vdss) 40 V
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Gate Charge (Qg) (Max) @ Vgs 102 nC @ 10 V
- Supplier Device Package PG-TO263-3
- Power Dissipation (Max) 3.8W (Ta), 150W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 20 V
- Vgs(th) (Max) @ Id 3.4V @ 81µA
- Current - Continuous Drain (Id) @ 25°C 30A (Ta), 122A (Tc)
- Rds On (Max) @ Id, Vgs 2.35mOhm @ 70A, 10V