IPB038N15NM6ATMA1
Part Number:
IPB038N15NM6ATMA1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Infineon Technologies
Description:
TRENCH >=100V
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Drain to Source Voltage (Vdss) 150 V
- Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
- Supplier Device Package PG-TO263-3-2
- Drive Voltage (Max Rds On, Min Rds On) 8V, 15V
- Power Dissipation (Max) 3.8W (Ta), 294W (Tc)
- Vgs(th) (Max) @ Id 4V @ 179µA
- Input Capacitance (Ciss) (Max) @ Vds 6400 pF @ 75 V
- Current - Continuous Drain (Id) @ 25°C 21A (Ta), 156A (Tc)
- Rds On (Max) @ Id, Vgs 3.6mOhm @ 76A, 15V