IPDQ60R065S7XTMA1
Part Number:
IPDQ60R065S7XTMA1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Infineon Technologies
Description:
HIGH POWER_NEW PG-HDSOP-22
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 600 V
- Current - Continuous Drain (Id) @ 25°C 9A (Tc)
- Power Dissipation (Max) 195W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 12V
- Rds On (Max) @ Id, Vgs 65mOhm @ 8A, 12V
- Vgs(th) (Max) @ Id 4.5V @ 490µA
- Gate Charge (Qg) (Max) @ Vgs 51 nC @ 12 V
- Input Capacitance (Ciss) (Max) @ Vds 1932 pF @ 300 V
- Supplier Device Package PG-HDSOP-22-1
- Package / Case 22-PowerBSOP Module