IPF050N10NF2SATMA1
Part Number:
IPF050N10NF2SATMA1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Infineon Technologies
Description:
MOSFET
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Gate Charge (Qg) (Max) @ Vgs 76 nC @ 10 V
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Package / Case TO-263-7, D2PAK (6 Leads + Tab)
- Supplier Device Package PG-TO263-7
- Power Dissipation (Max) 3.8W (Ta), 150W (Tc)
- Vgs(th) (Max) @ Id 3.8V @ 84µA
- Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 50 V
- Rds On (Max) @ Id, Vgs 5.05mOhm @ 60A, 10V
- Current - Continuous Drain (Id) @ 25°C 19A (Ta), 117A (Tc)