IPT022N10NF2SATMA1

IPT022N10NF2SATMA1

Part Number: IPT022N10NF2SATMA1
Product Classification: Single FETs, MOSFETs
Manufacturer: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 100 V
  • Vgs (Max) ±20V
  • FET Feature -
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Grade -
  • Qualification -
  • Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V
  • Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
  • Package / Case 8-PowerSFN
  • Power Dissipation (Max) 3.8W (Ta), 250W (Tc)
  • Vgs(th) (Max) @ Id 3.8V @ 169µA
  • Input Capacitance (Ciss) (Max) @ Vds 7300 pF @ 50 V
  • Supplier Device Package PG-HSOF-8-10
  • Current - Continuous Drain (Id) @ 25°C 29A (Ta), 236A (Tc)
  • Rds On (Max) @ Id, Vgs 2.25mOhm @ 150A, 10V