IPW65R018CM8XKSA1
Part Number:
IPW65R018CM8XKSA1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Infineon Technologies
Description:
IPW65R018CM8XKSA1
Packaging:
Tube
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-247-3
- Power Dissipation (Max) 521W (Tc)
- Current - Continuous Drain (Id) @ 25°C 116A (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 173 nC @ 10 V
- Supplier Device Package PG-TO247-3-U06
- Vgs(th) (Max) @ Id 4.7V @ 1.48mA
- Rds On (Max) @ Id, Vgs 18mOhm @ 55.6A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 8290 pF @ 400 V