IQDH29NE2LM5SCATMA1
Part Number:
IQDH29NE2LM5SCATMA1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Infineon Technologies
Description:
OPTIMOS POWER MOSFETS 25 V - 150
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±16V
- Gate Charge (Qg) (Max) @ Vgs 110 nC @ 4.5 V
- Drain to Source Voltage (Vdss) 25 V
- Package / Case 8-PowerWDFN
- Current - Continuous Drain (Id) @ 25°C 75A (Ta), 789A (Tc)
- Rds On (Max) @ Id, Vgs 0.29mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id 2V @ 1.448mA
- Input Capacitance (Ciss) (Max) @ Vds 17000 pF @ 12 V
- Power Dissipation (Max) 2.5W (Ta), 278W (Tc)
- Supplier Device Package PG-WHSON-8-U02