IQE030N06NM5CGSCATMA1
Part Number:
IQE030N06NM5CGSCATMA1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Infineon Technologies
Description:
OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 10V
- Power Dissipation (Max) 2.5W (Ta), 100W (Tc)
- Vgs(th) (Max) @ Id 3.3V @ 50µA
- Input Capacitance (Ciss) (Max) @ Vds 3800 pF @ 30 V
- Current - Continuous Drain (Id) @ 25°C 21A (Ta), 132A (Tc)
- Supplier Device Package PG-WHTFN-9-1
- Package / Case 9-PowerWDFN