IRF100PW219XKSA1
Part Number:
IRF100PW219XKSA1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Infineon Technologies
Description:
TRENCH >=100V
Packaging:
Tube
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case TO-247-3
- Gate Charge (Qg) (Max) @ Vgs 210 nC @ 10 V
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 16000 pF @ 50 V
- Power Dissipation (Max) 3.8W (Ta), 341W (Tc)
- Vgs(th) (Max) @ Id 3.8V @ 278µA
- Supplier Device Package PG-TO247-3-U06
- Current - Continuous Drain (Id) @ 25°C 33A (Ta), 203A (Tc)