IRF60DM206ATMA1
Part Number:
IRF60DM206ATMA1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Infineon Technologies
Description:
FET N-CHANNEL
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 130A (Tc)
- Power Dissipation (Max) 96W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Rds On (Max) @ Id, Vgs 2.9mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id 3.7V @ 150µA
- Supplier Device Package DirectFET™ Isometric ME
- Package / Case DirectFET™ Isometric ME
- Input Capacitance (Ciss) (Max) @ Vds 6530 pF @ 25 V