ISG0616N10NM5HSCATMA1

ISG0616N10NM5HSCATMA1

Part Number: ISG0616N10NM5HSCATMA1
Product Classification: FET, MOSFET Arrays
Manufacturer: Infineon Technologies
Description: MOSFET 2N-CH 100V 19A 10WHITFN
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Grade -
  • Qualification -
  • Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
  • Drain to Source Voltage (Vdss) 100V
  • Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V
  • Configuration 2 N-Channel (Half Bridge)
  • Vgs(th) (Max) @ Id 3.8V @ 85µA
  • Power - Max 3W (Ta), 167W (Tc)
  • Current - Continuous Drain (Id) @ 25°C 19A (Ta), 139A (Tc)
  • Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 50V
  • Package / Case 10-PowerWDFN
  • Supplier Device Package PG-WHITFN-10-1