IV1Q06060T3G
Part Number:
IV1Q06060T3G
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Inventchip
Description:
SIC MOSFET, 650V 60MOHM, TO247-3
Packaging:
Tube
ROHS Status:
Yes
Currency:
-
Specification
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Package / Case TO-247-3
- Current - Continuous Drain (Id) @ 25°C 50A (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Supplier Device Package TO-247-3
- Power Dissipation (Max) 227W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Technology SiCFET (Silicon Carbide)
- Vgs (Max) +20V, -5V
- Rds On (Max) @ Id, Vgs 80mOhm @ 15A, 20V
- Vgs(th) (Max) @ Id 5V @ 3.9mA
- Gate Charge (Qg) (Max) @ Vgs 69.5 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 1640 pF @ 800 V