IV1Q12160D7Z

IV1Q12160D7Z

Part Number: IV1Q12160D7Z
Product Classification: Single FETs, MOSFETs
Manufacturer: Inventchip
Description: SIC MOSFET, 1200V 160MOHM, TO263
Packaging: Tube
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Mounting Type Through Hole
  • Part Status Active
  • FET Type N-Channel
  • FET Feature -
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Current - Continuous Drain (Id) @ 25°C 20A (Tc)
  • Supplier Device Package TO-263-7
  • Drain to Source Voltage (Vdss) 1200 V
  • Power Dissipation (Max) 108W (Tc)
  • Vgs(th) (Max) @ Id 5V @ 1.9mA
  • Drive Voltage (Max Rds On, Min Rds On) 20V
  • Technology SiCFET (Silicon Carbide)
  • Vgs (Max) +20V, -5V
  • Rds On (Max) @ Id, Vgs 195mOhm @ 10A, 20V
  • Gate Charge (Qg) (Max) @ Vgs 43 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds 885 pF @ 800 V
  • Package / Case TO-263-7