IV3Q12035D7Z

IV3Q12035D7Z

Part Number: IV3Q12035D7Z
Product Classification: Single FETs, MOSFETs
Manufacturer: Inventchip
Description: GEN3, SIC MOSFET, 1200V 35MOHM,
Packaging: Strip
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Mounting Type Through Hole
  • Part Status Active
  • FET Type N-Channel
  • FET Feature -
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Vgs(th) (Max) @ Id 4V @ 8mA
  • Supplier Device Package TO-263-7
  • Drain to Source Voltage (Vdss) 1200 V
  • Current - Continuous Drain (Id) @ 25°C 68A (Tc)
  • Technology SiCFET (Silicon Carbide)
  • Power Dissipation (Max) 326W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 18V
  • Vgs (Max) +20V, -5V
  • Package / Case TO-263-7
  • Rds On (Max) @ Id, Vgs 46mOhm @ 30A, 18V
  • Gate Charge (Qg) (Max) @ Vgs 83 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds 2082 pF @ 800 V