IV3Q12035T4Z

IV3Q12035T4Z

Part Number: IV3Q12035T4Z
Product Classification: Single FETs, MOSFETs
Manufacturer: Inventchip
Description: GEN3, SIC MOSFET, 1200V 35MOHM,
Packaging: Tube
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Mounting Type Through Hole
  • Part Status Active
  • FET Type N-Channel
  • FET Feature -
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Current - Continuous Drain (Id) @ 25°C 67A (Tc)
  • Drain to Source Voltage (Vdss) 1200 V
  • Package / Case TO-247-4
  • Power Dissipation (Max) 395W (Tc)
  • Vgs(th) (Max) @ Id 4V @ 12mA
  • Technology SiCFET (Silicon Carbide)
  • Drive Voltage (Max Rds On, Min Rds On) 18V
  • Supplier Device Package TO-247-4
  • Vgs (Max) +20V, -5V
  • Gate Charge (Qg) (Max) @ Vgs 135 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 800 V
  • Rds On (Max) @ Id, Vgs 46mOhm @ 30A, 18V