MT3S113P(TE12L,F)
Part Number:
MT3S113P(TE12L,F)
Product Classification:
Bipolar RF Transistors
Manufacturer:
Toshiba Semiconductor and Storage
Description:
RF TRANS NPN 5.3V 7.7GHZ PW-MINI
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- Transistor Type NPN
- Package / Case TO-243AA
- Operating Temperature 150°C (TJ)
- Current - Collector (Ic) (Max) 100mA
- Gain 10.5dB
- Power - Max 1.6W
- Supplier Device Package PW-MINI
- Noise Figure (dB Typ @ f) 1.45dB @ 1GHz
- DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
- Voltage - Collector Emitter Breakdown (Max) 5.3V
- Frequency - Transition 7.7GHz