NTBL023N065M3S
Part Number:
NTBL023N065M3S
Product Classification:
Single FETs, MOSFETs
Manufacturer:
onsemi
Description:
SILICON CARBIDE (SIC) MOSFET ELI
Packaging:
Bulk
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 650 V
- Current - Continuous Drain (Id) @ 25°C 77A (Tc)
- Power Dissipation (Max) 312W (Tc)
- Vgs(th) (Max) @ Id 4V @ 10mA
- Technology SiC (Silicon Carbide Junction Transistor)
- Package / Case 8-PowerSFN
- Supplier Device Package 8-HPSOF
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Input Capacitance (Ciss) (Max) @ Vds 1950 pF @ 400 V
- Vgs (Max) +22V, -8V
- Gate Charge (Qg) (Max) @ Vgs 69 nC @ 18 V
- Rds On (Max) @ Id, Vgs 32.6mOhm @ 20A, 18V