NTH4L095N065SC1
Part Number:
NTH4L095N065SC1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
onsemi
Description:
SIC MOS TO247-4L 650V
Packaging:
Tube
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 31A (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Package / Case TO-247-4
- Technology SiCFET (Silicon Carbide)
- Supplier Device Package TO-247-4
- Power Dissipation (Max) 129W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs (Max) +22V, -8V
- Rds On (Max) @ Id, Vgs 105mOhm @ 12A, 18V
- Vgs(th) (Max) @ Id 4.3V @ 4mA
- Input Capacitance (Ciss) (Max) @ Vds 956 pF @ 325 V