NVBG050N170M1

NVBG050N170M1

Part Number: NVBG050N170M1
Product Classification: Single FETs, MOSFETs
Manufacturer: onsemi
Description: SILICON CARBIDE (SIC) MOSFET EL
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • FET Feature -
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Grade Automotive
  • Qualification AEC-Q101
  • Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Current - Continuous Drain (Id) @ 25°C 50A (Tc)
  • Supplier Device Package D2PAK-7
  • Drive Voltage (Max Rds On, Min Rds On) 20V
  • Technology SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss) 1700 V
  • Vgs (Max) +25V, -15V
  • Vgs(th) (Max) @ Id 4.3V @ 10mA
  • Power Dissipation (Max) 385W (Tc)
  • Rds On (Max) @ Id, Vgs 76mOhm @ 35A, 20V
  • Gate Charge (Qg) (Max) @ Vgs 107 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds 2078 pF @ 1000 V