NXH008T120M3F2PTHG
Part Number:
NXH008T120M3F2PTHG
Product Classification:
FET, MOSFET Arrays
Manufacturer:
onsemi
Description:
MOSFET 4N-CH 1200V 129A 29PIM
Packaging:
Tray
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Chassis Mount
- FET Feature -
- Grade -
- Qualification -
- Package / Case Module
- Operating Temperature -40°C ~ 175°C (TJ)
- Technology Silicon Carbide (SiC)
- Current - Continuous Drain (Id) @ 25°C 129A (Tc)
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Configuration 4 N-Channel
- Gate Charge (Qg) (Max) @ Vgs 454nC @ 20V
- Rds On (Max) @ Id, Vgs 11.5mOhm @ 100A, 18V
- Vgs(th) (Max) @ Id 4.4V @ 60mA
- Input Capacitance (Ciss) (Max) @ Vds 9129pF @ 800V
- Power - Max 371W (Tj)
- Supplier Device Package 29-PIM (56.7x42.5)