NXH010P120M3F1PG
Part Number:
NXH010P120M3F1PG
Product Classification:
FET, MOSFET Arrays
Manufacturer:
onsemi
Description:
MOSFET 2N-CH 1200V 105A
Packaging:
Tray
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Chassis Mount
- Supplier Device Package -
- FET Feature -
- Grade -
- Qualification -
- Package / Case Module
- Operating Temperature -40°C ~ 175°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 105A (Tc)
- Configuration 2 N-Channel (Half Bridge)
- Technology Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Power - Max 272W (Tj)
- Rds On (Max) @ Id, Vgs 14.5mOhm @ 90A, 18V
- Vgs(th) (Max) @ Id 4.4V @ 45mA
- Gate Charge (Qg) (Max) @ Vgs 314nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds 6451pF @ 800V