PSMN2R9-100SSEJ

PSMN2R9-100SSEJ

Part Number: PSMN2R9-100SSEJ
Product Classification: Single FETs, MOSFETs
Manufacturer: Nexperia USA Inc.
Description: POWERMOS ASFETS
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 100 V
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs (Max) ±20V
  • FET Feature -
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Grade -
  • Qualification -
  • Rds On (Max) @ Id, Vgs 2.9mOhm @ 25A, 10V
  • Gate Charge (Qg) (Max) @ Vgs 188 nC @ 10 V
  • Vgs(th) (Max) @ Id 3.6V @ 1mA
  • Supplier Device Package LFPAK88 (SOT1235)
  • Package / Case SOT-1235
  • Power Dissipation (Max) 341W (Ta)
  • Current - Continuous Drain (Id) @ 25°C 210A (Ta)
  • Input Capacitance (Ciss) (Max) @ Vds 13280 pF @ 50 V