R6009KND3TL1
Part Number:
R6009KND3TL1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
ROHM Semiconductor
Description:
NCH 600V 9A TO-252, HIGH-SPEED S
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature 150°C (TJ)
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Drain to Source Voltage (Vdss) 600 V
- Power Dissipation (Max) 94W (Tc)
- Vgs(th) (Max) @ Id 5V @ 1mA
- Current - Continuous Drain (Id) @ 25°C 9A (Tc)
- Supplier Device Package TO-252
- Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 25 V
- Gate Charge (Qg) (Max) @ Vgs 16.5 nC @ 10 V
- Rds On (Max) @ Id, Vgs 535mOhm @ 2.8A, 10V