R6502END3TL1

R6502END3TL1

Part Number: R6502END3TL1
Product Classification: Single FETs, MOSFETs
Manufacturer: ROHM Semiconductor
Description: 650V 1.7A TO-252, LOW-NOISE POWE
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs (Max) ±20V
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature 150°C (TJ)
  • Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Current - Continuous Drain (Id) @ 25°C 1.7A (Tc)
  • Drain to Source Voltage (Vdss) 650 V
  • Supplier Device Package TO-252
  • Gate Charge (Qg) (Max) @ Vgs 6.5 nC @ 10 V
  • Power Dissipation (Max) 26W (Tc)
  • Input Capacitance (Ciss) (Max) @ Vds 65 pF @ 25 V
  • Vgs(th) (Max) @ Id 4V @ 40µA
  • Rds On (Max) @ Id, Vgs 4Ohm @ 600mA, 10V