R8011KNZ4C13
Part Number:
R8011KNZ4C13
Product Classification:
Single FETs, MOSFETs
Manufacturer:
ROHM Semiconductor
Description:
NCH 800V 11A, TO-247AD, HIGH-SPE
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-247-3
- Operating Temperature 150°C (TJ)
- Drain to Source Voltage (Vdss) 800 V
- Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 11A (Ta)
- Rds On (Max) @ Id, Vgs 450mOhm @ 5.5A, 10V
- Power Dissipation (Max) 139W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 100 V
- Supplier Device Package TO-247G
- Vgs(th) (Max) @ Id 4.5V @ 5.5mA