R8019KNZ4C13

R8019KNZ4C13

Part Number: R8019KNZ4C13
Product Classification: Single FETs, MOSFETs
Manufacturer: ROHM Semiconductor
Description: NCH 800V 19A, TO-247AD, HIGH-SPE
Packaging: Tape & Reel (TR)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Mounting Type Through Hole
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs (Max) ±20V
  • FET Feature -
  • Grade -
  • Qualification -
  • Package / Case TO-247-3
  • Operating Temperature 150°C (TJ)
  • Drain to Source Voltage (Vdss) 800 V
  • Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
  • Power Dissipation (Max) 208W (Tc)
  • Current - Continuous Drain (Id) @ 25°C 19A (Ta)
  • Rds On (Max) @ Id, Vgs 265mOhm @ 9.5A, 10V
  • Supplier Device Package TO-247G
  • Vgs(th) (Max) @ Id 4.5V @ 7mA
  • Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 100 V