RD3N01BATTL1
Part Number:
RD3N01BATTL1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
ROHM Semiconductor
Description:
PCH -80V -10A TO-252, POWER MOSF
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
Specification
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 1A (Ta)
- Operating Temperature 150°C (TJ)
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Power Dissipation (Max) 25W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
- Drain to Source Voltage (Vdss) 80 V
- Vgs(th) (Max) @ Id 4V @ 1mA
- Supplier Device Package TO-252
- Rds On (Max) @ Id, Vgs 141mOhm @ 5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 840 pF @ 40 V