RD3N03BATTL1
Part Number:
RD3N03BATTL1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
ROHM Semiconductor
Description:
PCH -80V -30A, TO-252 (DPAK), PO
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- FET Type P-Channel
- Operating Temperature 150°C (TJ)
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Power Dissipation (Max) 54W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Current - Continuous Drain (Id) @ 25°C 30A (Ta)
- Drain to Source Voltage (Vdss) 80 V
- Vgs(th) (Max) @ Id 4V @ 1mA
- Supplier Device Package TO-252
- Rds On (Max) @ Id, Vgs 56mOhm @ 15A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 40 V