RD3P02BATTL1

RD3P02BATTL1

Part Number: RD3P02BATTL1
Product Classification: Single FETs, MOSFETs
Manufacturer: ROHM Semiconductor
Description: PCH -100V -20A POWER MOSFET: RD3
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 100 V
  • Vgs (Max) ±20V
  • FET Feature -
  • Grade -
  • Qualification -
  • FET Type P-Channel
  • Operating Temperature 150°C (TJ)
  • Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Current - Continuous Drain (Id) @ 25°C 20A (Tc)
  • Power Dissipation (Max) 56W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
  • Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
  • Vgs(th) (Max) @ Id 4V @ 1mA
  • Supplier Device Package TO-252
  • Input Capacitance (Ciss) (Max) @ Vds 1480 pF @ 50 V
  • Rds On (Max) @ Id, Vgs 116mOhm @ 10A, 10V