RQ3E100BNTB1
Part Number:
RQ3E100BNTB1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
ROHM Semiconductor
Description:
NCH 30V 21A POWER MOSFET: RQ3E10
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
- Operating Temperature 150°C (TJ)
- Vgs(th) (Max) @ Id 2.5V @ 1mA
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Drain to Source Voltage (Vdss) 30 V
- Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 15 V
- Package / Case 8-PowerVDFN
- Supplier Device Package 8-HSMT (3.2x3)
- Power Dissipation (Max) 2W (Ta), 15W (Tc)
- Rds On (Max) @ Id, Vgs 10.4mOhm @ 10A, 10V
- Current - Continuous Drain (Id) @ 25°C 10A (Ta), 21A (Tc)