RQ3N025ATTB1
Part Number:
RQ3N025ATTB1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
ROHM Semiconductor
Description:
PCH -80V -2.5A, HSMT8, POWER MOS
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
Specification
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- FET Type P-Channel
- Operating Temperature 150°C (TJ)
- Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Drain to Source Voltage (Vdss) 80 V
- Vgs(th) (Max) @ Id 4V @ 1mA
- Package / Case 8-PowerVDFN
- Supplier Device Package 8-HSMT (3.2x3)
- Current - Continuous Drain (Id) @ 25°C 2.5A (Ta), 7A (Tc)
- Power Dissipation (Max) 2W (Ta), 14W (Tc)
- Rds On (Max) @ Id, Vgs 240mOhm @ 2.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 485 pF @ 40 V