S2M0016120N

S2M0016120N

Part Number: S2M0016120N
Product Classification: Single FETs, MOSFETs
Manufacturer: SMC Diode Solutions
Description: MOSFETS SILICON CARBIDES 1200V 1
Packaging: Bulk
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Chassis Mount
  • FET Type N-Channel
  • FET Feature -
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Grade -
  • Qualification -
  • Package / Case SOT-227-4, miniBLOC
  • Current - Continuous Drain (Id) @ 25°C 140A (Tc)
  • Supplier Device Package SOT-227
  • Drain to Source Voltage (Vdss) 1200 V
  • Power Dissipation (Max) 517W (Tc)
  • Technology SiCFET (Silicon Carbide)
  • Vgs (Max) +20V, -5V
  • Vgs(th) (Max) @ Id 3.6V @ 23mA
  • Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
  • Rds On (Max) @ Id, Vgs 23mOhm @ 75A, 20V
  • Gate Charge (Qg) (Max) @ Vgs 285 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds 4540 pF @ 1000 V