SCT025W120G3AG
Part Number:
SCT025W120G3AG
Product Classification:
Single FETs, MOSFETs
Manufacturer:
STMicroelectronics
Description:
AUTOMOTIVE-GRADE SILICON CARBIDE
Packaging:
Tube
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Grade Automotive
- Qualification AEC-Q101
- Operating Temperature -55°C ~ 200°C (TJ)
- Package / Case TO-247-3
- Current - Continuous Drain (Id) @ 25°C 56A (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Technology SiCFET (Silicon Carbide)
- Supplier Device Package HiP247™
- Power Dissipation (Max) 388W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs (Max) +18V, -5V
- Input Capacitance (Ciss) (Max) @ Vds 1990 pF @ 800 V
- Vgs(th) (Max) @ Id 4.2V @ 5mA
- Rds On (Max) @ Id, Vgs 37mOhm @ 25A, 18V
- Gate Charge (Qg) (Max) @ Vgs 73 nC @ 18 V