SCT027HU65G3AG
Part Number:
SCT027HU65G3AG
Product Classification:
Single FETs, MOSFETs
Manufacturer:
STMicroelectronics
Description:
SIC MOSFET
Packaging:
Bulk
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Power Dissipation (Max) 300W (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Current - Continuous Drain (Id) @ 25°C 60A (Tc)
- Technology SiC (Silicon Carbide Junction Transistor)
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Supplier Device Package HU3PAK
- Vgs (Max) +18V, -5V
- Vgs(th) (Max) @ Id 4.2V @ 5mA
- Rds On (Max) @ Id, Vgs 39.3mOhm @ 30A, 18V
- Input Capacitance (Ciss) (Max) @ Vds 1277 pF @ 400 V
- Gate Charge (Qg) (Max) @ Vgs 60.4 nC @ 18 V