SI2392BDS-T1-GE3

SI2392BDS-T1-GE3

Part Number: SI2392BDS-T1-GE3
Product Classification: Single FETs, MOSFETs
Manufacturer: Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) MOSFET SOT
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 100 V
  • Vgs (Max) ±20V
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Package / Case TO-236-3, SC-59, SOT-23-3
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Vgs(th) (Max) @ Id 3V @ 250µA
  • Supplier Device Package SOT-23-3 (TO-236)
  • Rds On (Max) @ Id, Vgs 52mOhm @ 10A, 10V
  • Gate Charge (Qg) (Max) @ Vgs 7.1 nC @ 10 V
  • Current - Continuous Drain (Id) @ 25°C 2A (Ta), 2.3A (Tc)
  • Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 50 V
  • Power Dissipation (Max) 1.25W (Ta), 1.7W (Tc)