SI3460BDV-T1-BE3

SI3460BDV-T1-BE3

Part Number: SI3460BDV-T1-BE3
Product Classification: Single FETs, MOSFETs
Manufacturer: Vishay Siliconix
Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Obsolete
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Vgs(th) (Max) @ Id 1V @ 250µA
  • Drain to Source Voltage (Vdss) 20 V
  • Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 10 V
  • Package / Case SOT-23-6 Thin, TSOT-23-6
  • Vgs (Max) ±8V
  • Supplier Device Package 6-TSOP
  • Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs 27mOhm @ 5.1A, 4.5V
  • Gate Charge (Qg) (Max) @ Vgs 24 nC @ 8 V
  • Power Dissipation (Max) 2W (Ta), 3.5W (Tc)
  • Current - Continuous Drain (Id) @ 25°C 6.7A (Ta), 8A (Tc)