SIA4446DJ-T1-GE3
Part Number:
SIA4446DJ-T1-GE3
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Vishay Siliconix
Description:
N-CHANNEL 40 V (D-S) MOSFET POWE
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
- Drain to Source Voltage (Vdss) 40 V
- Vgs(th) (Max) @ Id 2.4V @ 250µA
- Supplier Device Package PowerPAK® SC-70-6 Dual
- Package / Case PowerPAK® SC-70-6 Dual
- Power Dissipation (Max) 3.5W (Ta), 19.2W (Tc)
- Rds On (Max) @ Id, Vgs 11mOhm @ 10A, 10V
- Vgs (Max) +20V, -16V
- Current - Continuous Drain (Id) @ 25°C 13A (Ta), 31A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 915 pF @ 20 V