SIHFBE30S-GE3
Part Number:
SIHFBE30S-GE3
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Vishay Siliconix
Description:
MOSFET N-CHANNEL 800V
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V
- Power Dissipation (Max) 125W (Tc)
- Drain to Source Voltage (Vdss) 800 V
- Current - Continuous Drain (Id) @ 25°C 4.1A (Tc)
- Rds On (Max) @ Id, Vgs 3Ohm @ 2.5A, 10V
- Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V
- Supplier Device Package TO-263 (D2PAK)
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB