SIHH100N65E-T1-GE3

SIHH100N65E-T1-GE3

Part Number: SIHH100N65E-T1-GE3
Product Classification: Single FETs, MOSFETs
Manufacturer: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Current - Continuous Drain (Id) @ 25°C 28A (Tc)
  • Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V
  • Vgs (Max) ±30V
  • Drain to Source Voltage (Vdss) 650 V
  • Vgs(th) (Max) @ Id 5V @ 250µA
  • Package / Case 8-PowerTDFN
  • Rds On (Max) @ Id, Vgs 100mOhm @ 12A, 10V
  • Power Dissipation (Max) 184W (Tc)
  • Supplier Device Package PowerPAK® 8 x 8
  • Input Capacitance (Ciss) (Max) @ Vds 2137 pF @ 100 V