SIR5110DP-T1-RE3

SIR5110DP-T1-RE3

Part Number: SIR5110DP-T1-RE3
Product Classification: Single FETs, MOSFETs
Manufacturer: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 100 V
  • Vgs(th) (Max) @ Id 4V @ 250µA
  • Vgs (Max) ±20V
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
  • Supplier Device Package PowerPAK® SO-8
  • Package / Case PowerPAK® SO-8
  • Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
  • Rds On (Max) @ Id, Vgs 6mOhm @ 35A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds 920 pF @ 50 V
  • Current - Continuous Drain (Id) @ 25°C 13.5A (Ta), 47.6A (Tc)
  • Power Dissipation (Max) 4.8W (Ta), 59.5W (Tc)