SIRC16DP-T1-RE3
Part Number:
SIRC16DP-T1-RE3
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Vishay Siliconix
Description:
N-CHANNEL 25-V (D-S) MOSFET W/SC
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V
- Vgs(th) (Max) @ Id 2.4V @ 250µA
- Drain to Source Voltage (Vdss) 25 V
- Supplier Device Package PowerPAK® SO-8
- Package / Case PowerPAK® SO-8
- FET Feature Schottky Diode (Body)
- Vgs (Max) +20V, -16V
- Rds On (Max) @ Id, Vgs 0.96mOhm @ 15A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 5150 pF @ 10 V
- Power Dissipation (Max) 5W (Ta), 54.3W (Tc)
- Current - Continuous Drain (Id) @ 25°C 57A (Ta), 60A (Tc)