SIRS5700DP-T1-RE3
Part Number:
SIRS5700DP-T1-RE3
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Vishay Siliconix
Description:
N-CHANNEL MOSFET
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
- Drain to Source Voltage (Vdss) 150 V
- Supplier Device Package PowerPAK® SO-8
- Package / Case PowerPAK® SO-8
- Rds On (Max) @ Id, Vgs 5.6mOhm @ 20A, 10V
- Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
- Power Dissipation (Max) 8.3W (Ta), 278W (Tc)
- Current - Continuous Drain (Id) @ 25°C 25A (Ta), 144A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 5455 pF @ 75 V