SIS5712DN-T1-GE3

SIS5712DN-T1-GE3

Part Number: SIS5712DN-T1-GE3
Product Classification: Single FETs, MOSFETs
Manufacturer: Vishay Siliconix
Description: MOSFET N-CH 150V 2.2A PPAK1212-8
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Vgs(th) (Max) @ Id 4V @ 250µA
  • Vgs (Max) ±20V
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Drain to Source Voltage (Vdss) 150 V
  • Gate Charge (Qg) (Max) @ Vgs 11.3 nC @ 10 V
  • Supplier Device Package PowerPAK® 1212-8
  • Package / Case PowerPAK® 1212-8
  • Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
  • Power Dissipation (Max) 3.7W (Ta), 39.1W (Tc)
  • Current - Continuous Drain (Id) @ 25°C 5.6A (Ta), 18A (Tc)
  • Rds On (Max) @ Id, Vgs 55.5mOhm @ 5.6A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 75 V