SIS590DN-T1-GE3

SIS590DN-T1-GE3

Part Number: SIS590DN-T1-GE3
Product Classification: FET, MOSFET Arrays
Manufacturer: Vishay Siliconix
Description: MOSFET N/P-CH 100V 2.7A PPAK1212
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Vgs(th) (Max) @ Id 2.5V @ 250µA
  • Configuration N and P-Channel
  • Gate Charge (Qg) (Max) @ Vgs -
  • Drain to Source Voltage (Vdss) 100V
  • Package / Case PowerPAK® 1212-8 Dual
  • Supplier Device Package PowerPAK® 1212-8 Dual
  • Current - Continuous Drain (Id) @ 25°C 2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc)
  • Rds On (Max) @ Id, Vgs 167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds 265pF 2 50V, 325pF @ 50V
  • Power - Max 2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc)