SISA18BDN-T1-GE3

SISA18BDN-T1-GE3

Part Number: SISA18BDN-T1-GE3
Product Classification: Single FETs, MOSFETs
Manufacturer: Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Drain to Source Voltage (Vdss) 30 V
  • Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
  • Vgs(th) (Max) @ Id 2.4V @ 250µA
  • Package / Case 8-PowerWDFN
  • Vgs (Max) +20V, -16V
  • Input Capacitance (Ciss) (Max) @ Vds 680 pF @ 15 V
  • Rds On (Max) @ Id, Vgs 6.83mOhm @ 10A, 10V
  • Current - Continuous Drain (Id) @ 25°C 18A (Ta), 60A (Tc)
  • Power Dissipation (Max) 3.2W (Ta), 36.8W (Tc)
  • Supplier Device Package PowerPAK® 1212-8PT