SISF06DN-T1-GE3
Part Number:
SISF06DN-T1-GE3
Product Classification:
FET, MOSFET Arrays
Manufacturer:
Vishay Siliconix
Description:
MOSFET 2N-CH 30V 28A PWRPAK1212
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 30V
- Vgs(th) (Max) @ Id 2.3V @ 250µA
- Configuration 2 N-Channel (Dual) Common Drain
- Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
- Power - Max 5.2W (Ta), 69.4W (Tc)
- Package / Case PowerPAK® 1212-8SCD
- Supplier Device Package PowerPAK® 1212-8SCD
- Current - Continuous Drain (Id) @ 25°C 28A (Ta), 101A (Tc)
- Rds On (Max) @ Id, Vgs 4.5mOhm @ 7A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 2050pF @ 15V