SIZ998BDT-T1-GE3
Part Number:
SIZ998BDT-T1-GE3
Product Classification:
FET, MOSFET Arrays
Manufacturer:
Vishay Siliconix
Description:
MOSFET 2N-CH 30V 23.7A 8PWRPAIR
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 30V
- Vgs(th) (Max) @ Id 2.2V @ 250µA
- Package / Case 8-PowerWDFN
- Configuration 2 N-Channel (Dual), Schottky
- Supplier Device Package 8-PowerPair® (6x5)
- Current - Continuous Drain (Id) @ 25°C 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)
- Rds On (Max) @ Id, Vgs 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
- Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V, 46.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 790pF @ 15V, 2130pF @ 15V
- Power - Max 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)