SIZF918BDT-T1-GE3
Part Number:
SIZF918BDT-T1-GE3
Product Classification:
FET, MOSFET Arrays
Manufacturer:
Vishay Siliconix
Description:
DUAL N-CHANNEL 30 V (D-S) MOSFET
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Configuration 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss) 30V
- Vgs(th) (Max) @ Id 2.2V @ 250µA
- Package / Case 8-PowerWDFN
- Supplier Device Package 8-PowerPair® (6x5)
- Power - Max 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
- Current - Continuous Drain (Id) @ 25°C 25A (Ta), 73A (Tc), 41A (Ta), 158A (Tc)
- Rds On (Max) @ Id, Vgs 3.3mOhm @ 10A, 10V, 1.4Ohm @ 15A, 10V
- Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V, 77nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 1290pF @ 15V, 3350pF @ 15V