SQD10N30-330H_4GE3
Part Number:
SQD10N30-330H_4GE3
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Vishay Siliconix
Description:
N-CHANNEL 300-V (D-S) 175C MOSFE
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Current - Continuous Drain (Id) @ 25°C 10A (Tc)
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Drain to Source Voltage (Vdss) 300 V
- Power Dissipation (Max) 107W (Tc)
- Vgs (Max) ±30V
- Supplier Device Package TO-252AA
- Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2190 pF @ 25 V
- Vgs(th) (Max) @ Id 4.4V @ 250µA
- Rds On (Max) @ Id, Vgs 330mOhm @ 14A, 10V